Silicon epitaxial NPN transistor Slkor BFP196 for in microwave VHF UHF and CATV broadband low noise amplifiers
Product Overview
The BFP196 is a silicon epitaxial NPN transistor designed for microwave and high-frequency applications. It offers high power gain, wide bandwidth, low noise, and low leakage current, along with small junction capacitance and a large dynamic range for excellent current linearity. This transistor is ideal for use in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadband low-noise amplifiers. Typical applications include satellite TV tuners, digital TV set-top boxes, CATV amplifiers, analog and digital cordless phones, radar detection probes, wireless security alarms, RF modules, and fiber optic modules.
Product Attributes
- Brand: slkormicro
- Model: BFP196
- Transistor Type: NPN Silicon Epitaxial
- Package Type: SOT143B
- Marking: RIs-##
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tamb=25) | ||||||
| Collector-Base Voltage | VCBO | 20 | V | |||
| Collector-Emitter Voltage | VCEO | 12 | V | |||
| Emitter-Base Voltage | VEBO | 2.0 | V | |||
| Collector Current | ICM | 150 | mA | |||
| Power Dissipation | PT | 700 | mW | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Electrical Characteristics (Tamb=25) | ||||||
| Collector-Base Breakdown Voltage | BVCBO | 20 | - | - | V | |
| Collector-Emitter Breakdown Voltage | BVCEO | 12 | - | - | V | |
| Collector Cutoff Current | ICBO | VCB=10V, IE=0 | - | - | 0.1 | A |
| DC Current Gain | hFE | VCE=8V, IC=50mA VCE=6V, IC=30mA | 75 100 | 110 140 | - | |
| Characteristic Frequency | fT | VCE=8V, IC=70mA, f=500MHz | 8.5 | 9.0 | - | GHz |
| Collector-Emitter Capacitance | Cce | IC=iC=0, VCE=10V, f=1MHz | - | 0.35 | - | pF |
| Collector-Base Capacitance | Ccb | IE=ie=0, VCB=10V, f=1MHz | - | 0.8 | 1.3 | pF |
| Emitter-Base Capacitance | Ceb | IC=iC=0, VEB=0.5V, f=1MHz | - | 3.9 | - | pF |
| Insertion Power Gain | |S21| | IC=50mA, VCE=8V, f=900MHz IC=50mA, VCE=8V, f=1.8GHz | 13 6.5 | 14 7.5 | - | dB |
| Noise Figure | NF | VCE=8V, IC=20mA, f=900MHz VCE=8V, IC=20mA, f=1.8GHz | - | 1.3 2.2 | - | dB |
| Maximum Unilateral Power Gain | GUM | IC=50mA, VCE=8V, f=900MHz IC=50mA, VCE=8V, f=1.8GHz | 16 - | 17 10 | - | dB |
| Output Power at 1dB Gain Compression | PL1 | IC=50mA, VCE=8V, RL=50, f=900MHz | - | 20 | - | dBm |
| Third Order Intercept Point | ITO | IC=50mA, VCE=8V, RL=50, fp=900MHz, fq=902MHz | - | 33 | - | dBm |
Package Dimensions
SOT143B Package Dimensions (Units:mm)
| Dimension | Value (mm) |
|---|---|
| Length | 2.9 0.05 |
| Width | 1.7 0.05 |
| Height | 1.9 0.05 |
| Lead Pitch (Typical) | 1.0 TYP. |
| Lead Width (Typical) | 0.42 0.06 |
| Lead Length (Typical) | 0.4 0.1 |
| Body Thickness (Typical) | 0.1 TYP. |
| Base Width (Typical) | 0.83 0.05 |
| Overall Width (Typical) | 1.3 0.1 |
Pin Connections (SOT143B)
Top View:
- Pin 1: Collector
- Pin 2 & 4: Emitter
- Pin 3: Base
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