High Frequency Power Switching MOSFET Siliup SP4406P8 30V N Channel with Low RDSon and Fast Response
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Delivery Time:
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Product Description
Product Overview
The SP4406P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on), with typical RDS(on) values of 9.5m at 10V and 12m at 4.5V. This device is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOP-8L
- Device Code: 44N06
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 9.5 | m | ||
| RDS(on) TYP | RDS(on) | @4.5V | 12 | m | ||
| ID | ID | 10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25, unless otherwise noted) | 10 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 40 | A | ||
| Single Pulse Avalanche Energy1 | EAS | (Ta=25, unless otherwise noted) | 20 | mJ | ||
| Power Dissipation | PD | (Ta=25, unless otherwise noted) | 3 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25, unless otherwise noted) | 41.7 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=12A | - | 9.5 | 11.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 12 | 15.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1321 | - | pF |
| Output Capacitance | Coss | VDS=15V , VGS=0V , f=1MHz | - | 180 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V , VGS=0V , f=1MHz | - | 160 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=25A | - | 2.3 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V , VGS=10V , ID=25A | - | 7 | - | |
| Gate-Drain Charge | Qgd | VDS=15V , VGS=10V , ID=25A | - | 4.5 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=3, ID=20A | - | 4.5 | - | nS |
| Rise Time | Tr | VDD=15V, VGS=10V , RG=3, ID=20A | - | 17.6 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=15V, VGS=10V , RG=3, ID=20A | - | 16.7 | - | nS |
| Fall Time | Tf | VDD=15V, VGS=10V , RG=3, ID=20A | - | 58.6 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 27 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100A/us, TJ=25 | - | 21 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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