NPN Silicon Epitaxial Planar Transistor Slkor S9014 Suitable for Low Noise Pre Amplifier Applications

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Product Description

Product Overview

The S9014 is an NPN Silicon Epitaxial Planar Transistor designed as a complementary component to the S9015. It offers excellent HFE linearity and is suitable for low-level, low-noise pre-amplifier applications. The transistor has a power dissipation rating of 0.2W.

Product Attributes

Brand: SLKORMicro
Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO	@ Ta=25			50	V
Collector-Emitter Voltage	VCEO	@ Ta=25			45	V
Emitter-Base Voltage	VEBO	@ Ta=25			5	V
Collector Current -Continuous	IC	@ Ta=25			100	mA
Collector Dissipation	PC	@ Ta=25			200	mW
Junction and Storage Temperature	Tj,Tstg	@ Ta=25	-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=0.1mA,IB=0	45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Collector cut-off current	ICEO	VCE=35V,IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=3V,IC=0			0.1	A
DC current gain	hFE	VCE=5V,IC=1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB= 5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB= 5mA			1	V
Transition frequency	fT	VCE=6V, IC= 20mA, f=30MHz		150		MHz