Power Management MOSFET Siliup SP78MF65TF 650V Super Junction with Low Gate Charge and TO247 Package
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Product Description
Product Overview
The SP78MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on) for enhanced efficiency. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard-switched and high-frequency circuits, and power management systems. It is available in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP78MF65TF
- Package Type: TO-247
- Material: Super-Junction MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage | V(BR)DSS | 650 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 19 | m | ||
| Continuous Drain Current | ID | 78 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 78 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 52 | A | ||
| Pulsed Drain Current | IDM | 312 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 455 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 368 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.34 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 19 | 23.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=100V , VGS=0V , f=1MHz | - | 9305 | - | pF |
| Output Capacitance | Coss | - | 132 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 81 | - | pF | |
| Total Gate Charge | Qg | VDS=400V , VGS=10V , ID=22A | - | 196 | - | nC |
| Gate-Source Charge | Qgs | - | 53 | - | nC | |
| Gate-Drain Charge | Qgd | - | 61 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V , RG=2, ID=20A | - | 55 | - | nS |
| Rise Time | Tr | - | 15 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 178 | - | nS | |
| Fall Time | Tf | - | 5 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 78 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 191 | - | nS |
| Reverse recovery charge | Qrr | - | 2.1 | - | uC | |
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