SP010N13GTQ N Channel 100V Power MOSFET Featuring Split Gate Trench Technology for Battery Management

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP010N13GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features advanced Split Gate Trench Technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for battery management and uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N13GTQ
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TO-220-3L

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Voltage	V(BR)DSS			100		V
On-Resistance (Typical)	RDS(on)TYP	@10V		13		m
On-Resistance (Typical)	RDS(on)TYP	@4.5V		16		m
Continuous Drain Current	ID	(Tc=25)		55		A
Drain-Source Voltage	VDS	(Ta=25 unless otherwise noted)			100	V
Gate-Source Voltage	VGS	(Ta=25 unless otherwise noted)			20	V
Continuous Drain Current	ID	(Tc=25)			55	A
Continuous Drain Current	ID	(Tc=100)			37	A
Pulsed Drain Current	IDM				220	A
Single Pulse Avalanche Energy	EAS				144	mJ
Power Dissipation	PD	(Tc=25)			87	W
Thermal Resistance Junction-to-Case	RJC				1.44	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	100	-	-	V
Drain Cut-Off Current	IDSS	VDS = 80V, VGS = 0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	1.0	1.8	2.5	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 20A	-	13	17	m
Drain-Source ON Resistance	RDS(ON)	VGS = 4.5V, ID = 10A	-	16	21	m
Input Capacitance	Ciss	VDS =50V, VGS = 0V, f = 1.0MHz	-	1225	-	pF
Output Capacitance	Coss	VDS =50V, VGS = 0V, f = 1.0MHz	-	379	-	pF
Reverse Transfer Capacitance	Crss	VDS =50V, VGS = 0V, f = 1.0MHz	-	17	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=20A	-	14	-	nC
Gate-Source Charge	Qgs	VDS=50V , VGS=10V , ID=20A	-	5	-	nC
Gate-Drain Charge	Qgd	VDS=50V , VGS=10V , ID=20A	-	2.7	-	nC
Turn-On Delay Time	td(on)	VGS = 10V, VDS =50V, ID=20A RG = 2.2	-	38	-	nS
Rise Time	tr	VGS = 10V, VDS =50V, ID=20A RG = 2.2	-	12	-	nS
Turn-Off Delay Time	td(off)	VGS = 10V, VDS =50V, ID=20A RG = 2.2	-	51	-	nS
Fall Time	tf	VGS = 10V, VDS =50V, ID=20A RG = 2.2	-	17	-	nS
Source-Drain Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	55	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	40	-	nS
Reverse Recovery Charge	Qrr	IS=20A, di/dt=100A/us, TJ=25	-	42	-	nC

Package Information (TO-220-3L)

Symbol	Dimensions In Millimeters (Min-Max)	Dimensions In Inches (Min-Max)
A	4.400 - 4.600	0.173 - 0.181
A1	2.250 - 2.550	0.089 - 0.100
b	0.710 - 0.910	0.028 - 0.036
b1	1.170 - 1.370	0.046 - 0.054
c	0.330 - 0.650	0.013 - 0.026
c1	1.200 - 1.400	0.047 - 0.055
D	9.910 - 10.250	0.390 - 0.404
E	8.950 - 9.750	0.352 - 0.384
E1	12.650 - 13.050	0.498 - 0.514
e	2.540 TYP.	0.100 TYP.
e1	4.980 - 5.180	0.196 - 0.204
F	2.650 - 2.950	0.104 - 0.116
H	7.900 - 8.100	0.311 - 0.319
h	0.000 - 0.300	0.000 - 0.012
L	12.900 - 13.400	0.508 - 0.528
L1	2.850 - 3.250	0.112 - 0.128
V	6.900 REF.	0.276 REF.
	3.400 - 3.800	0.134 - 0.150