Surface Mount P Channel MOSFET Siliup SP2231NC with 1 Amp Continuous Current and PDFN1006 3L Package

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Product Description

Product Overview

The SP2231NC is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, making it suitable for applications such as battery switches and DC/DC converters. Key electrical characteristics include a Drain-Source Voltage (V(BR)DSS) of -20V, a typical On-Resistance (RDS(on)) of 130m at -4.5V, and a continuous drain current (ID) of -1.0A.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: PDFN1006-3L
Device Code: 223

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Drain-Source Voltage	V(BR)DSS	-	-20	-	-	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-1A	-	130	180	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V, ID=-0.5A	-	180	270	m
Continuous Drain Current	ID	-	-	-1.0	-	A
Pulse Drain Current	IDM	-	-	-4	-	A
Power Dissipation	PD	(Ta=25)	-	-	150	mW
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=-250A	-0.4	-0.65	-1.0	V
Input Capacitance	Ciss	VDS=-10V, VGS=0V, f=1MHz	-	270	-	pF
Output Capacitance	Coss	-	-	55	-	pF
Reverse Transfer Capacitance	Crss	-	-	30	-	pF
Total Gate Charge	Qg	VDS=-10V, VGS=-4.5V, ID=-2A	-	2.7	-	nC
Gate-Source Charge	Qgs	-	-	0.46	-	-
Gate-Drain Charge	Qgd	-	-	0.7	-	-
Turn-On Delay Time	td(on)	VDD=-10V, VGS=-4.5V, RG=3, RL=5	-	10	-	nS
Turn-On Rise Time	tr	-	-	5	-	-
Turn-Off Delay Time	td(off)	-	-	21	-	-
Turn-Off Fall Time	tf	-	-	7	-	-
Diode Forward Voltage	VSD	VGS=0V, IS=-1A, TJ=25	-	-	-1.2	V