60V N Channel Power MOSFET Siliup SP60N03GTQ with Split Gate Trench Technology and Low Gate Charge
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP60N03GTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N03G
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 3.7 | m | |||
| RDS(ON)TYP | @4.5V | 4.6 | m | |||
| ID | 140 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | 140 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 95 | A | |||
| Pulse Drain Current | IDM | Tested | 560 | A | ||
| Single Pulse Avalanche Energy | EAS | 552 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 145 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 3.7 | 4.7 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 4.6 | 6.2 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 4250 | - | pF |
| Output Capacitance | Coss | - | 975 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 41 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=3 | - | 13.5 | - | nS |
| Rise Time | tr | - | 96 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Fall Time | tf | - | 115 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Reverse Recovery Time | Trr | IS=50 A, di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 30 | - | nC | |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| Min. | Max. | Min. | Max. | |||
| A | 4.400 | 4.600 | 0.173 | 0.181 | ||
| A1 | 2.250 | 2.550 | 0.089 | 0.100 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.330 | 0.650 | 0.013 | 0.026 | ||
| c1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| D | 9.910 | 10.250 | 0.390 | 0.404 | ||
| E | 8.950 | 9.750 | 0.352 | 0.384 | ||
| E1 | 12.650 | 13.050 | 0.498 | 0.514 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| F | 2.650 | 2.950 | 0.104 | 0.116 | ||
| H | 7.900 | 8.100 | 0.311 | 0.319 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| L | 12.900 | 13.400 | 0.508 | 0.528 | ||
| L1 | 2.850 | 3.250 | 0.112 | 0.128 | ||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 | 3.800 | 0.134 | 0.150 | |||
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