npn transistor Slkor 2SD2150-R featuring excellent current gain and low collector saturation voltage

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Product Description

Product Overview

The 2SD2150 is an NPN transistor designed for general-purpose applications. It offers excellent current-to-gain characteristics and a low collector saturation voltage (VCE(sat)). This transistor is complementary to the 2SB1412, making it suitable for various circuit designs. Its robust construction and reliable performance make it a valuable component for industrial and electronic applications.

Product Attributes

Brand: slkormicro
Model: 2SD2150
Type: NPN Transistor
Package: SOT-89
Complementary to: 2SB1412

Technical Specifications

Parameter	Symbol	Rating/Conditions	Unit
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage	VCBO	40	V
Collector - Emitter Voltage	VCEO	20	V
Emitter - Base Voltage	VEBO	6	V
Collector Current - Continuous	IC	3	A
Collector Power Dissipation	PC	500	mW
Junction Temperature	TJ	150
Storage Temperature Range	Tstg	-55 to 150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage	VCBO	Ic= 100u A, IE= 0	40 V
Collector-emitter breakdown voltage	VCEO	Ic= 1 mA, IB= 0	20 V
Emitter-base breakdown voltage	VEBO	IE= 100u A, IC= 0	6 V
Collector-base cut-off current	ICBO	VCB= 35 V, IE= 0	0.1 uA
Emitter cut-off current	IEBO	VEB= 5V, IC=0	0.1 uA
Collector-emitter saturation voltage	VCE(sat)	IC=2 A, IB=100mA	0.5 V
Base-emitter saturation voltage	VBE(sat)	IC=2 A, IB=100mA	1.2 V
DC current gain	hFE	VCE= 2V, IC= 100mA	180 - 560
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz	25 pF
Transition frequency	fT	VCE=2V, IC=500mA, f=100MHz	290 MHz