High Current 120V N Channel MOSFET Siliup SP012N02AGHTF with Low Gate Charge and Avalanche Energy Tested
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP012N02AGHTF is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This device is designed for power switching applications, DC-DC converters, and power management systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP012N02AGH
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 120 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 270 | A | |
| Continuous Drain Current (Tc=100) | ID | 180 | A | |
| Pulsed Drain Current | IDM | 1080 | A | |
| Single Pulse Avalanche Energy | EAS | 2056 | mJ | VDD=50V,VGS=10V,L=0.5mH,RG=25 |
| Power Dissipation (Tc=25) | PD | 310 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.4 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 120 | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | A | VDS = 96V, VGS = 0V |
| Gate Leakage Current | IGSS | 0.1 | A | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.5 - 4.5 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | 2.0 | m | VGS = 10V, ID = 50A |
| Input Capacitance | Ciss | 12700 | pF | VDS = 60V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 870 | pF | |
| Reverse Transfer Capacitance | Crss | 48 | pF | |
| Total Gate Charge | Qg | 213 | nC | VDS=60V , VGS=10V , ID=75A |
| Gate-Source Charge | Qgs | 58 | nC | |
| Gate-Drain Charge | Qg | 59 | nC | |
| Turn-On Delay Time | td(on) | 24 | nS | VGS = 10V, VDS = 60V, ID = 75A RG = 1.6 |
| Rise Time | tr | 28 | nS | |
| Turn-Off Delay Time | td(off) | 79 | nS | |
| Fall Time | tf | 31 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 270 | A | |
| Reverse Recovery Time | Trr | 112 | nS | IS=100A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 289 | nC |
Package Information (TO-247)
| Symbol | Dimensions (mm) | Dimensions (inches) | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina