High voltage PNP transistor Slkor 2SA1013-Y offering continuous collector current and circuit function

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Product Description

Product Overview

This PNP transistor is designed for high voltage applications and offers a large continuous collector current capability. It is suitable for various electronic circuits requiring robust performance and reliability.

Product Attributes

Marking: 1013
Package: SOT-89
Classification of hFE: R, O, Y

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-160	V
Collector-Emitter Voltage	VCEO			-160	V
Emitter-Base Voltage	VEBO			-6	V
Collector Current (Continuous)	IC			-1	A
Collector Power Dissipation	PC			0.5	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=- 100A , IE=0	-160		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA , IB=0	-160		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-6		V
Collector cut-off current	ICBO	VCB=-150 V , IE=0		-1	A
Emitter cut-off current	IEBO	VEB=-6V, IC=0		-1	A
DC current gain	hFE	VCE=-5 V, IC=- 200mA	60	320
Collector-emitter saturation voltage	VCE(sat)	IC= -500m A, IB= -50mA		-1.5	V
Base-emitter voltage	VBE	IC= -5 mA, VCE=- 5V		-0.75	V
Transition frequency	fT	VCE= -5 V, IC= -200mA		15	MHz
Thermal Resistance from Junction to Ambient	RJA			250	/W