switching MOSFET Siliup SP20N10TH featuring low gate charge and 27A drain current for power conversion

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Product Description

Product Overview

The SP20N10TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. This MOSFET is particularly well-suited for DC-DC converters and has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 20N10
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				20	V
RDS(on) Typ.	RDS(on)TYP	@4.5V		10.5	m
RDS(on) Typ.	RDS(on)TYP	@2.5V		14.5	m
Continuous Drain Current	ID				27	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)			20	V
Gate-Source Voltage	VGS	(Ta=25)			10	V
Continuous Drain Current	ID	(TC=25)			27	A
Continuous Drain Current	ID	(TC=100)			18	A
Pulsed Drain Current	IDM				108	A
Single Pulse Avalanche Energy	EAS				59	mJ
Power Dissipation	PD	(TC=25)			26	W
Thermal Resistance Junction-to-Case	RJC				4.8	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	0.5	0.7	1.2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=8A	-	10.5	14	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=2.5V , ID=6A	-	14.5	20	m
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	-	865	-	pF
Output Capacitance	Coss		-	105	-	pF
Reverse Transfer Capacitance	Crss		-	55	-	pF
Total Gate Charge	Qg	VDS=10V,VGS=10V,ID=20A	-	15	-	nC
Gate-Source Charge	Qgs		-	1.8	-
Gate-Drain Charge	Qg d		-	2.8	-
Turn-On Delay Time	Td(on)	VGS=10V,VDD=10V,ID=20A,RG=1	-	10	-	nS
Rise Time	Tr		-	20	-
Turn-Off Delay Time	Td(off)		-	32	-
Fall Time	Tf		-	12	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	27	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	19	-	nS
Reverse Recovery Charge	Qrr		-	9.5	-	nC

TO-252 Package Information (Dimensions in Millimeters)
Symbol	Min.	Max.	REF.
A	2.200	2.400
A1	0.000	0.127
b	0.660	0.860
c	0.460	0.580
D	6.500	6.700
D1	5.100	5.460
D2			4.830
E	6.000	6.200
e	2.186	2.386
L	9.800	10.400
L1			2.900
L2	1.400	1.700
L3			1.600
L4	0.600	1.000
	1.100	1.300
	0	8
h	0.000	0.300
V			5.350