Compact 20V P-Channel MOSFET Siliup SP2006KT3 Featuring 2KV ESD Protection for in Battery Switch and Power Circuits
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Product Description
Product Overview
The SP2006KT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters. The MOSFET is available in a SOT-323 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-323
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 650 | m | |||
| ID | -0.66 | A | ||||
| RDS(on) | @-2.5V | 850 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Pulse Drain Current | IDM | Tested | -2.64 | A | ||
| Power Dissipation | PD | 200 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 625 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 650 | 750 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-200mA | 850 | 1000 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MH | 75 | pF | ||
| Output Capacitance | Coss | 20 | pF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-0.5A | 1.25 | nC | ||
| Gate-Source Charge | Qgs | 0.35 | ||||
| Gate-Drain Charge | Qg | 0.27 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS | ||
| Turn-On Rise Time | tr | 19 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 24 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| SOT-323 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.100 | 0.035 | 0.043 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.000 | 0.035 | 0.039 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.000 | 2.200 | 0.079 | 0.087 |
| E | 1.150 | 1.350 | 0.045 | 0.053 |
| E1 | 2.150 | 2.450 | 0.085 | 0.096 |
| e | 0.650 TYP. | 0.026 TYP. | ||
| e1 | 1.200 | 1.400 | 0.047 | 0.055 |
| L | 0.525 REF. | 0.021 REF. | ||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 |
| 0 | 8 | 0 | 8 | |
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