Low Gate Charge 150V N Channel Power MOSFET Siliup SP015N03BGHTD with Split Gate Trench Technology

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Product Description

Product Overview

The SP015N03BGHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for high-frequency applications and power management, making it suitable for PWM applications and hard-switched, high-frequency circuits. The device is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 015N03BGH
Package: TO-263
Technology: Split Gate Trench

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			150		V
RDS(on)	RDS(on)	@10V		3.6		m
Continuous Drain Current	ID			220		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25, unless otherwise noted)			150	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID	(Tc=25)			220	A
Continuous Drain Current	ID	(Tc=100)			150	A
Pulsed Drain Current	IDM				880	A
Single Pulse Avalanche Energy	EAS				1521	mJ
Power Dissipation	PD	(Tc=25)			300	W
Thermal Resistance Junction-to-Case	RJC				0.42	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	150	-	-	V
Drain-Source Leakage Current	IDSS	VDS = 80V, VGS = 0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2.5	3.5	4.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS = 10V, ID = 20A	-	3.6	4.5	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=75V , VGS=0V , f=1MHz	-	8538	-	pF
Output Capacitance	Coss		-	772	-	pF
Reverse Transfer Capacitance	Crss		-	21	-	pF
Total Gate Charge	Qg	VDS=75V , VGS=10V , ID=20A	-	122	-	nC
Gate-Source Charge	Qgs		-	48	-	nC
Gate-Drain Charge	Qgd		-	33	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=75V, VGS=10V , RG=3.0, ID=20A	-	33	-	nS
Rise Time	Tr		-	59	-
Turn-Off Delay Time	Td(off)		-	89	-	nS
Fall Time	Tf		-	48	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	220	A
Reverse Recovery Time	Trr	IS=80A, di/dt=100A/us, TJ=25	-	96	-	nS
Reverse Recovery Charge	Qrr		-	310	-	nC

Package Information (TO-263)

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.470	4.670	0.176	0.184
A1	0.000	0.150	0.000	0.006
B	1.120	1.420	0.044	0.056
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.310	0.530	0.012	0.021
c1	1.170	1.370	0.046	0.054
D	10.010	10.310	0.394	0.406
E	8.500	8.900	0.335	0.350
e	2.540 TYP.		0.100 TYP.
e1	4.980	5.180	0.196	0.204
L	14.940	15.500	0.588	0.610
L1	4.950	5.450	0.195	0.215
L2	2.340	2.740	0.092	0.108
L3	1.300	1.700	0.051	0.067
	0	8	0	8
V	5.600 REF.		0.220 REF.