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China High Speed Power Switching MOSFET with Low RDS on and Low Gate Charge Siliup SP012N06GHTQ in TO 220 3L Package for sale

High Speed Power Switching MOSFET with Low RDS on and Low Gate Charge Siliup SP012N06GHTQ in TO 220 3L Package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP012N06GHTQ is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for high-speed power switching, DC-DC converters, and power management applications. The device comes in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP012N06GHTQ
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TO-220-3L (1:G 2:D 3:S)
  • Marking: 012N06GH

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 120 V
RDS(on) RDS(on) @10V 6.5 m
Continuous Drain Current ID 130 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 120 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (Tc=25) 130 A
Continuous Drain Current ID (Tc=100) 90 A
Pulsed Drain Current IDM 520 A
Single Pulse Avalanche Energy1 EAS 552 mJ
Power Dissipation PD (Tc=25) 160 W
Thermal Resistance Junction-to-Case RJC 0.78 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 120 - - V
Drain Cut-Off Current IDSS VDS = 96V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 6.5 8.2 m
Dynamic Characteristics
Input Capacitance Ciss VDS = 60V, VGS = 0V, f = 1.0MHz - 4618 - pF
Output Capacitance Coss - 894 - pF
Reverse Transfer Capacitance Crss - 28 - pF
Total Gate Charge Qg VDS=60V , VGS=10V , ID=75A - 82 - nC
Gate-Source Charge Qgs - 26 - nC
Gate-Drain Charge Qgd - 11 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 75A, RG = 1.6 - 26 - nS
Rise Time tr - 42 - nS
Turn-Off Delay Time td(off) - 41 - nS
Fall Time tf - 36 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 130 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 85 - nS
Reverse Recovery Charge Qrr - 215 - nC

Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25

Package Information

Package: TO-220-3L

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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