30V P Channel MOSFET Siliup SP30P13TH with TO 252 Package Low Gate Charge and Avalanche Energy Testing

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Product Description

Product Overview

The SP30P13TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient performance, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. It is supplied in a TO-252 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 30P13
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			-30		V
RDS(on) Typ	RDS(on)TYP	@ -10V		13	18	m
RDS(on) Typ	RDS(on)TYP	@ -4.5V		22	30	m
Continuous Drain Current	ID			-30		A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS			-30		V
Gate-Source Voltage	VGS			12		V
Continuous Drain Current (TC=25)	ID			-30		A
Continuous Drain Current (TC=100)	ID			-20		A
Pulsed Drain Current	IDM			-120		A
Single Pulse Avalanche Energy	EAS			210		mJ
Power Dissipation (TC=25)	PD			35		W
Thermal Resistance Junction-to-Case	RJC			3.6		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V , TJ=25			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.2	-1.6	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-20A		13	18	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-15A		22	30	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		1600		pF
Output Capacitance	Coss			350		pF
Reverse Transfer Capacitance	Crss			300		pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-10A		30		nC
Gate-Source Charge	Qgs			5.5		nC
Gate-Drain Charge	Qgd			8		nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V,VGS=-10V,RG=3, ID=-10A		10		nS
Rise Time	Tr			60		nS
Turn-Off Delay Time	Td(off)			52		nS
Fall Time	Tf			70		nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			1.2	V
Maximum Body-Diode Continuous Current	IS			-30		A
Reverse Recovery Time	Trr	IS=-5A, di/dt=100A/us, TJ=25		15		nS
Reverse Recovery Charge	Qrr			5		nC

TO-252 Package Information (Dimensions in Millimeters)
Symbol	Min.	Max.	Note
A	2.200	2.400
A1	0.000	0.127
b	0.660	0.860
c	0.460	0.580
D	6.500	6.700
D1	5.100	5.460
D2	4.830		REF.
E	6.000	6.200
e	2.186	2.386
L	9.800	10.400
L1	2.900		REF.
L2	1.400	1.700
L3	1.600		REF.
L4	0.600	1.000
	1.100	1.300
	0	8
h	0.000	0.300
V	5.350		REF.