General Purpose NPN Transistor Slkor MMST3904 with SOT-323 Package and 40V Collector Emitter Voltage

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Product Description

MMST3904 NPN Transistor

Product Overview

The MMST3904 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a collector current capability of 0.2A and a collector-emitter voltage of 40V, making it suitable for various switching and amplification tasks in electronic circuits. This transistor is housed in a compact SOT-323 package, ideal for space-constrained designs.

Product Attributes

Brand: SLKORMicro
Type: NPN Transistor
Package: SOT-323
Marking: K2N

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Features
Collector Current Capability	IC				0.2	A
Collector Emitter Voltage	VCEO				40	V
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage	VCBO				60	V
Collector - Emitter Voltage	VCEO				40	V
Emitter - Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				200	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance Junction To Ambient	RJA			625	/W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-55		150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage	VCBO	Ic= 100 A IE= 0 (Note.1)	60			V
Collector- emitter breakdown voltage	VCEO	Ic= 1 mA IB= 0	40			V
Emitter - base breakdown voltage	VEBO	IE= 100A IC= 0	5			V
Collector-base cut-off current	ICBO	VCB= 60 V , IE= 0 (Note.1)			60	nA
Collector- emitter cut-off current	ICEO	VCE= 40 V , IE= 0 (Note.1)			700	nA
Collector- emitter cut-off current	ICEX	VCE= 30 V ,VBE(off)= 3V			50	nA
Emitter cut-off current	IEBO	VEB= 5V , IC=0			100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=10 mA, IB=1 mA		0.25		V
Collector-emitter saturation voltage	VCE(sat)	IC=50 mA, IB=5 mA		0.3		V
Base - emitter saturation voltage	VBE(sat)	IC=10 mA, IB=1 mA		0.85		V
Base - emitter saturation voltage	VBE(sat)	IC=50 mA, IB=5 mA		0.95		V
DC current gain	hFE	VCE=1V, IC= 100 uA	40
		VCE=1V, IC= 1 mA	70
		VCE=1V, IC= 10 mA	100		300
		VCE=1V, IC= 50 mA	60
Delay time	td			35		nS
Rise time	tr			35		nS
Storage time	ts			225		nS
Fall time	tf			75		nS
Collector input capacitance	Cib	VEB= 0.5V, IE= 0,f=1MHz		8		pF
Collector output capacitance	Cob	VCB= 5V, IE= 0,f=1MHz		4		pF
Transition frequency	fT	VCE= 20V, IC=10mA,f=100MHz		300		MHz
Dimensions (mm)
A			1.8		2.2	mm
B			1.35		1.75	mm
A1			0.1		0.25	mm
Lp			0.45		0.75	mm
Q			0.1		0.3	mm
c			0.1		0.23	mm
D			2.0		2.4	mm
E			1.15		1.35	mm
e				1.3		mm
e1				0.65		mm
HE			1.1		1.4	mm
v			0.25		0.45	mm
w			0.13		0.2	mm