N Channel MOSFET Siliup SP60N23TH 60V with Low RDSon and High Continuous Drain Current in TO 252 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N23TH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), with RDS(on) of 23m at 10V and 30m at 4.5V. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and power switching applications. It comes in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N23
- Package: TO-252
- Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC=25) | ID | 30 | A | |||
| Continuous Drain Current (TC=100) | ID | 20 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 56 | mJ | |||
| Power Dissipation (TC=25) | PD | 45 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.8 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 23 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=15A | - | 30 | 40 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1304 | - | pF |
| Output Capacitance | Coss | - | 123 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 97 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 25.3 | - | nC |
| Gate-Source Charge | Qgs | - | 4.7 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6.1 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V , RG=3, ID=2A | - | 6 | - | nS |
| Rise Time | tr | - | 6.1 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 17 | - | nS | |
| Fall Time | tf | - | 3 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 30 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 29 | - | nS |
| Reverse Recovery Charge | Qrr | - | 50 | - | nC | |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| Φ | 1.100 | 1.300 | 0.043 | 0.051 |
| θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina