Fast switching 30V MOSFET Siliup SP3022CNJ with 100 percent avalanche energy test and ROHS compliant design
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Product Description
Product Overview
The SP3022CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching speeds and is available in a surface mount PDFN3X3-8L package. This device is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP3022CNJ
- Package: PDFN3X3-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
N-Channel Specifications:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage (V(BR)DSS) | V(BR)DSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Static Drain-Source On-Resistance (RDS(on)) | RDS(ON) | VGS = 10V, ID = 8A | - | 15 | 19 | m |
| Static Drain-Source On-Resistance (RDS(on)) | RDS(ON) | VGS = 4.5V, ID = 6A | - | 21 | 28 | m |
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | - | - | 8 | A |
| Single pulsed avalanche energy | EAS | (VDD=15V,VGS =10V,L = 0.5mH, Rg=25) | - | 30 | - | mJ |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 416 | - | pF |
| Output Capacitance | Coss | - | - | 62 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 51 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 5 | - | nC |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
P-Channel Specifications:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage (V(BR)DSS) | V(BR)DSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Static Drain-Source On-Resistance (RDS(ON)) | RDS(ON) | VGS =-10V, ID =-8A | - | 18 | 23 | m |
| Static Drain-Source On-Resistance (RDS(ON)) | RDS(ON) | VGS =-4.5V, ID =-6A | - | 25 | 34 | m |
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | - | - | -7 | A |
| Single pulsed avalanche energy | EAS | (VDD=-15V,VGS =-10V,L = 0.5mH, Rg=25) | - | 49 | - | mJ |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1070 | - | pF |
| Output Capacitance | Coss | - | - | 146 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 142 | - | pF |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 21 | - | nC |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
General Specifications:
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Gate-Source Voltage | VGS | 20 | V |
| Power Dissipation (Tc=25C) | PD | 14 | W |
| Thermal Resistance Junction-to-Case | RJC | 8.9 | C/W |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Operating Junction Temperature Range | TJ | -55 to 150 | C |
Package Information (PDFN3X3-8L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
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