Complementary MOSFET Siliup SP3034CP8 30V Device for Load Switch Battery Protection Power Management

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP3034CP8 is a 30V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: Complementary MOSFET
Package: SOP-8L
Lead Status: Lead-free product acquired
Testing: 100% Single Pulse avalanche energy Test
Device Code: 3034C

Technical Specifications

Product Summary	N-Channel	P-Channel
V(BR)DSS	30V	-30V
RDS(on)TYP	28m@10V, 42m@4.5V	38m@-10V, 58m@-4.5V
ID	5A	-5A
Applications	Battery Protection, Load Switch, Power Management

Parameter	Symbol	N-Channel		P-Channel		Units
Parameter	Symbol	Conditions	Value	Conditions	Value	Units
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS	30		-30		V
Gate-Source Voltage	VGS	20		20		V
Continuous Drain Current	ID	5		-5		A
Pulsed Drain Current	IDM	28		-32		A
Power Dissipation	PD	2				W
Thermal Resistance Junction-to-Ambient	RJA	62.5				/W
Storage Temperature Range	TSTG	-55 to 150
Operating Junction Temperature Range	TJ	-55 to 150
N-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=24V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1	1.6	2.2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=3.2A	-	28	38	m
		VGS=4.5V , ID=2.8A	-	42	55	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	-	235	-	pF
Output Capacitance	Coss		-	45	-	pF
Reverse Transfer Capacitance	Crss		-	17	-	pF
Total Gate Charge	Qg	VDS=15V , VGS=10V , ID=4A	-	6.5	-	nC
Gate-Source Charge	Qgs		-	1.5	-
Gate-Drain Charge	Qgd		-	2	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=15V, VGS=10V , RG=1, ID=4A	-	3	-	nS
Rise Time	Tr		-	16	-
Turn-Off Delay Time	Td(off)		-	12	-
Fall Time	Tf		-	4	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	5	A
Reverse Recovery Time	Trr	IS=4A, di/dt=100A/us, TJ=25	-	6.5	-	nS
Reverse Recovery Charge	Qrr		-	5	-	nC
P-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V , TJ=25	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1	-1.5	-2.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-4.1A	-	38	50	m
		VGS=-4.5V , ID=-3A	-	58	80	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz	-	501	-	pF
Output Capacitance	Coss		-	72	-	pF
Reverse Transfer Capacitance	Crss		-	57	-	pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-5A	-	9	-	nC
Gate-Source Charge	Qgs		-	1.5	-
Gate-Drain Charge	Qg		-	2.3	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V, VGS=-10V , RG=3, ID=-1A	-	8.6	-	nS
Rise Time	Tr		-	5.0	-
Turn-Off Delay Time	Td(off)		-	28.2	-
Fall Time	Tf		-	13.5	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	-5	A
Reverse Recovery Time	Trr	IS=-5A, di/dt=100A/us, TJ=25	-	31	-	nS
Reverse Recovery Charge	Qrr		-	10	-	nC