N Channel MOSFET Siliup SP30N27DTS 30 Volt Device Suitable for Power Switching and Battery Circuits

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Product Description

Product Overview

The SP30N27DTS is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP30N27DTS
Technology: N-Channel MOSFET
Package: SOT-23-6L
Marking Code: 30N27D

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				30	V
RDS(on)		@10V		27	m
		@4.5V		30	m
		@2.5V		40	m
Continuous Drain Current	ID				5.8	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				30	V
Gate-Source Voltage	VGSS			12	V
Continuous Drain Current	ID				5.8	A
Pulse Drain Current	IDM	Tested			23.2	A
Power Dissipation	PD				1.15	W
Thermal Resistance Junction-to-Ambient	RJA				108	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=24V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.7	1.0	1.4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID =5.8A	-	27	35	m
		VGS=4.5V , ID =5A	-	30	40	m
		VGS=2.5V , ID =4A	-	40	50	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=15V , VGS=0V , f=1MHz	-	745	-	pF
Output Capacitance	Coss		-	68	-
Reverse Transfer Capacitance	Crss		-	53	-
Total Gate Charge	Qg	VDS=15V , VGS=10V , ID=3A	-	18	-	nC
Gate-Source Charge	Qgs		-	3	-
Gate-Drain Charge	Qg		-	2.2	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=15V VGS=10V , RG=3 , ID=3A	-	5	-	nS
Turn-On Rise Time	tr		-	11	-
Turn-Off Delay Time	td(off)		-	25	-
Turn-Off Fall Time	tf		-	3	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Order Information
Device	Package	Unit/Tape
SP30N27DTS	SOT-23-6L	3000
Package Information (SOT-23-6L)
Symbol	Dimensions In Millimeters		Min	Max
	Dimensions In Inches		Min	Max
A			1.050	1.250	0.041	0.049
A1			0.000	0.100	0.000	0.004
A2			1.050	1.150	0.041	0.045
b			0.300	0.500	0.012	0.020
c			0.100	0.200	0.004	0.008
D			2.820	3.020	0.111	0.119
E			1.500	1.700	0.059	0.067
E1			2.650	2.950	0.104	0.116
e		(BSC)	0.950		0.037
e1			1.800	2.000	0.071	0.079
L			0.300	0.600	0.012	0.024
			0	8	0	8