High power N Channel MOSFET Siliup SP40N13T1 40V 7A low on resistance in compact SOT 23 3L package
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP40N13T1 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. The device comes in a surface mount SOT-23-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N13T1
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on)TYP | @10V | 13 | m | ||
| RDS(on)TYP | RDS(on)TYP | @4.5V | 18 | m | ||
| ID | ID | 7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulse Drain Current | IDM | Tested | 28 | A | ||
| Power Dissipation | PD | 1.1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 113 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5A | - | 13 | 20 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =3A | - | 18 | 24 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | - | 109 | - | ||
| Reverse Transfer Capacitance | Crss | - | 96 | - | ||
| Total Gate Charge | Qg | VDS=32V , VGS=4.5V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qg d | - | 5.3 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=1.5 , ID=7A | - | 5.5 | - | nS |
| Turn-On Rise Time | tr | - | 14 | - | ||
| Turn-Off Delay Time | td(off) | - | 24 | - | ||
| Turn-Off Fall Time | tf | - | 12 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23-3L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions in millimeters | Min. | Max. |
| A | 1.050 | 1.250 | |
| A1 | 0.000 | 0.100 | |
| A2 | 1.050 | 1.150 | |
| b | 0.300 | 0.500 | |
| c | 0.100 | 0.200 | |
| D | 2.820 | 3.020 | |
| E | 1.500 | 1.700 | |
| E1 | 2.650 | 2.950 | |
| e | 0.950 (Typ.) | ||
| e1 | 1.800 | 2.000 | |
| L | 0.300 | 0.600 | |
| 0 | 8 | ||
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