NPN transistor Slkor MMBTA44 featuring 400V VCEO and 350mW power dissipation for general electronics

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Product Description

Product Overview

The MMBTA44 is a general-purpose NPN silicon transistor designed for high voltage applications. It features a high Collector-Emitter Voltage (VCEO) of 400V and a continuous Collector Current (Ic) of 200mA, with a Power Dissipation (Pc) of 350mW. This transistor is a complement to the MMBTA94 and is suitable for various electronic circuits requiring robust voltage handling capabilities.

Product Attributes

Brand: slkormicro (implied by website reference)
Complementary Part: MMBTA94
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Limit	Unit
Collector-Base Voltage	VCBO		400	V
Collector-Emitter Voltage	VCEO		400	V
Emitter-Base Voltage	VEBO		6	V
Collector Current - Continuous	IC		0.2	A
Power Dissipation	PC		0.35	W
Thermal Resistance Junction to Ambient	RJA		357	/W
Junction Temperature	TJ		150
Storage Temperature	TSTG		-55+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100A, IE=0	400	V
Collector-Emitter Breakdown Voltage	V(BR)CEO*	IC=1mA, IB=0	400	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0	6	V
Collector Cut-off Current	ICBO	VCB=400V, IE=0	0.1	A
Emitter Cut-off Current	IEBO	VEB=4V, IC=0	0.1	A
DC Current Gain (hFE(1))	hFE	VCE=10V, IC=1mA	40
DC Current Gain (hFE(2))	hFE	VCE=10V, IC=10mA	50 - 200
DC Current Gain (hFE(3))	hFE	VCE=10V, IC=50mA	45
DC Current Gain (hFE(4))	hFE	VCE=10V, IC=100mA	40
Collector-Emitter Saturation Voltage (VCE(sat)1)	VCE(sat)	IC=1mA, IB=0.1mA	0.4	V
Collector-Emitter Saturation Voltage (VCE(sat)2)	VCE(sat)	IC=10mA, IB=1mA	0.5	V
Collector-Emitter Saturation Voltage (VCE(sat)3)	VCE(sat)	IC=50mA, IB=5mA	0.75	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=10mA, IB=1mA	0.75	V
Collector Output Capacitance	Cob	VCB=20V, IE=0, f=1MHz	7	pF
Emitter Input Capacitance	Cib	VEB=0.5V, IC=0, f=1MHz	130	pF
Transition Frequency	fT	VCE=20V, IC=10mA, f=30MHz	50	MHz