Medium Power Amplification and Switching Transistor Slkor MMBT4401 NPN Silicon Epitaxial Planar Type

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Price: Negotiable

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Product Description

Product Overview

The MMBT4401 is an NPN silicon epitaxial planar transistor designed for medium power amplification and switching applications. Its epitaxial planar die construction ensures reliable performance. A complementary PNP type, the MMBT4403, is also available. This transistor is ideal for general-purpose and switching applications.

Product Attributes

Brand: slkormicro (implied by URL)
Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-23
Complementary Type: MMBT4403

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Units
MAXIMUM RATING @ Ta=25
Collector-Base Voltage	VCBO		60	V
Collector-Emitter Voltage	VCEO		40	V
Emitter-Base Voltage	VEBO		6	V
Collector Current -Continuous	IC		600	mA
Collector Power Dissipation	PC		350	mW
Junction and Storage Temperature	Tj,Tstg		-55~150
ELECTRICAL CHARACTERISTICS @ Ta=25
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	40	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	6	V
Collector cut-off current	ICBO	VCB=50V,IE=0	0.1	A
Collector cut-off current	ICEO	VCE=35V,IE=0	0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0	0.1	A
DC current gain	hFE	VCE=1V,IC=0.1mA	20
		VCE=1V,IC=1.0mA	40
		VCE=1V,IC=10mA	80
		VCE=1V,IC=150mA	100
		VCE=2V,IC=500mA	40	300
Collector-emitter saturation voltage	VCE(sat)	IC=150mA, IB=15mA	0.4	V
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA	0.75	V
Base-emitter saturation voltage	VBE(sat)	IC=150mA, IB=15mA	0.75	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA	0.95	1.2
Transition frequency	fT	VCE=10V, IC= 20mA, f=100MHz	250	MHz
Collector output capacitance	Cob	VCB=5V,IE=0,f=1MHz	6.5	pF