60V N Channel MOSFET Siliup 2N7002W with 300mA Drain Current SOT 323 Surface Mount Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 2N7002W is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this MOSFET offers high power and current handling capabilities. It is suitable for use in battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: N-Channel MOSFET
Package: SOT-323
Marking Code: K72

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				60	V
Static Drain-Source On-Resistance	RDS(on)	@10V		1.7	3
Static Drain-Source On-Resistance	RDS(on)	@4.5V		1.8	4
Continuous Drain Current	ID				300	mA
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				60	V
Gate-Source Voltage	VGSS			20		V
Continuous Drain Current	ID				300	mA
Pulse Drain Current	IDM	Tested			1200	mA
Power Dissipation	PD				300	mW
Thermal Resistance Junction-to-Ambient	RJA				416	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	5	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	1	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =200mA	-	1.7	3
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =200mA	-	1.8	4
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	28	-	pF
Output Capacitance	Coss		-	10	-	pF
Reverse Transfer Capacitance	Crss		-	5	-	pF
Total Gate Charge	Qg	VDS=10V , VGS=4.5V , ID=300mA	-	1.7	-	nC
Gate-Source Charge	Qgs		-	0.35	-
Gate-Drain Charge	Qg d		-	0.5	-
Turn-On Delay Time	td(on)	VDD=30V VGS=10V , RG=25 , ID=300mA	-	3	-	nS
Turn-On Rise Time	tr		-	17	-
Turn-Off Delay Time	td(off)		-	10	-
Turn-Off Fall Time	tf		-	21	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-323)
Dimension	Symbol	Min.	Max.	Typ.		Unit
A	A	0.90	1.15			mm
A1	A1	0.00	0.10			mm
A2	A2	0.90	1.00			mm
b	b	0.30	0.50			mm
c	c	0.10	0.15			mm
D	D	2.00	2.20			mm
E	E	1.15	1.35			mm
E1	E1	2.15	2.40			mm
e	e			0.65		Typ.
e1	e1	1.20	1.40			mm
L	L			0.525	Ref.
L1	L1	0.26	0.46			mm