Siliup SP40P08TH P Channel MOSFET 40V Designed for Load Switching and Low On Resistance Performance

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Product Description

Product Overview

The SP40P08TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching, featuring low gate charge and low R_DS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 40P08
Package: TO-252

Technical Specifications

Product Summary
V(BR)DSS	R_DS(on)TYP	ID
-40V	8.9m @ -10V 13m @ -4.5V	-45A

Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Parameter	Symbol	Rating	Units
Drain-Source Voltage	VDS	-40	V
Gate-Source Voltage	VGS	20	V
Continuous Drain Current (TC=25)	ID	-45	A
Continuous Drain Current (TC=100)	ID	-30	A
Pulsed Drain Current	IDM	-180	A
Single Pulse Avalanche Energy¹	EAS	169	mJ
Power Dissipation (TC=25)	PD	85	W
Thermal Resistance Junction-to-Case	R_JC	1.47	/W
Storage Temperature Range	T_STG	-55 to 150
Operating Junction Temperature Range	T_J	-55 to 150

Electrical Characteristics (Ta=25, unless otherwise noted)
Parameter	Symbol	Conditions	Typ.	Unit
Static Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-40	V
Drain-Source Leakage Current	IDSS	VDS=-32V, VGS=0V, TJ=25	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =-250uA	-1.6	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-10A	8.9	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-8A	13	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-20V, VGS=0V, f=1MHz	3800	pF
Output Capacitance	Coss	VDS=-20V, VGS=0V, f=1MHz	329	pF
Reverse Transfer Capacitance	Crss	VDS=-20V, VGS=0V, f=1MHz	289	pF
Total Gate Charge	Qg	VDS=-20V, VGS=-10V, ID=-20A	69	nC
Gate-Source Charge	Qgs	VDS=-20V, VGS=-10V, ID=-20A	11	nC
Gate-Drain Charge	Qgd	VDS=-20V, VGS=-10V, ID=-20A	13	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-20V, VGS=-10V, RG=3, ID=-20A	11	nS
Rise Time	Tr	VDD=-20V, VGS=-10V, RG=3, ID=-20A	81	nS
Turn-Off Delay Time	td(off)	VDD=-20V, VGS=-10V, RG=3, ID=-20A	95	nS
Fall Time	Tf	VDD=-20V, VGS=-10V, RG=3, ID=-20A	73	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V, IS=-1A, TJ=25	1.2	V
Maximum Body-Diode Continuous Current	IS		-45	A
Reverse Recovery Time	Trr	IS=-20A, di/dt=100A/us, TJ=25	21	nS
Reverse Recovery Charge	Qrr	IS=-20A, di/dt=100A/us, TJ=25	12	nC

TO-252 Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.		0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.		0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.		0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.		0.211 REF.