Power switching and battery management solution Siliup SP010P35GNK 100V P Channel MOSFET with low RDS
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SP010P35GNK is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, battery management, and uninterruptible power supplies. This device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P35GNK
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN56-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -100 | V | ||||
| RDS(on)TYP | @-10V | 35 | m | |||
| ID | -25 | A | ||||
| RDS(on)TYP | @-4.5V | 45 | m | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -25 | A | |||
| Continuous Drain Current (Tc=100) | ID | -17 | A | |||
| Pulsed Drain Current | IDM | -100 | A | |||
| Single Pulse Avalanche Energy | EAS | 240 | mJ | |||
| Power Dissipation (Tc=25) | PD | 100 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = -250A, VGS = 0V | -100 | V | ||
| Drain Cut-Off Current | IDSS | VDS = -80V, VGS = 0V | -1 | uA | ||
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.6 | -2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V , ID=-15A | 35 | 45 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | 45 | 60 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V, VGS =-10V, f=1.0MHz | 2205 | pF | ||
| Output Capacitance | Coss | 197 | pF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=20A | 24 | nC | ||
| Gate-Source Charge | Qgs | 6 | ||||
| Gate-Drain Charge | Qg d | 3.7 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V,VDD=-50V, ID=-5A, RG=6 | 13 | nS | ||
| Rise Time | tr | 57 | ||||
| Turn-Off Delay Time | td(off) | 41 | ||||
| Fall Time | tf | 84 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -25 | A | |||
| Reverse Recovery Time | Trr | IS=-15A, di/dt=-100A/us, TJ=25 | 51 | nS | ||
| Reverse Recovery Charge | Qrr | 130 | nC | |||
| Package Information | ||||||
| Package Type | PDFN56-8L | |||||
| Dimensions (Millimeters) | Min. | Max. | ||||
| A | 0.900 | 1.000 | ||||
| A3 | 0.254REF. | |||||
| D | 4.944 | 5.096 | ||||
| E | 5.974 | 6.126 | ||||
| D1 | 3.910 | 4.110 | ||||
| E1 | 3.375 | 3.575 | ||||
| D2 | 4.824 | 4.976 | ||||
| E2 | 5.674 | 5.826 | ||||
| k | 1.190 | 1.390 | ||||
| b | 0.350 | 0.450 | ||||
| e | 1.270TYP. | |||||
| L | 0.559 | 0.711 | ||||
| L1 | 0.424 | 0.576 | ||||
| H | 0.574 | 0.726 | ||||
| 10 | 12 | |||||
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