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PNP Silicon Transistor Slkor 2SB1260-R Suitable for High Current and Voltage Electronic Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The 2SB1260 is an epitaxial planar type PNP silicon transistor designed for applications requiring high breakdown voltage and high current capabilities. It features good hFE linearity and low VCE(sat), making it a suitable complement to the 2SD1898. This transistor is ideal for various electronic applications where robust performance is essential.

Product Attributes

  • Type: PNP Silicon Transistor
  • Package: SOT-89
  • Manufacturing Process: Epitaxial Planar

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1 A
Collector Current (Pulse) IC -2 A
Collector Power Dissipation Pc *1: When mounted on a 40*40*0.7mm ceramic board. 0.5 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=-50A, IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -80 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A, IC=0 -5 V
Collector cut-off current ICBO VCB=-60V, IE=0 -1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -1 A
DC current gain hFE VCE=-3V, IC=-0.1A 120 390
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.4 V
Output Capacitance Cobo VCB=-10V, f=1.0MHz, IE=0 20 pF

Package Information

Device Package Shipping
2SB1260 SOT-89 1000 pcs / Tape & Reel

Package Outline (SOT-89)

Unit: mm

Dim Min Max
A 4.30 4.70
B 2.25 2.65
C 1.30 1.70
D 0.30 0.50
E 1.40 1.60
F 0.38 0.58
H 1.60 1.80
J 0.30 0.50
K 3.95 4.35
L 0.90 1.10

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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