40V N Channel MOSFET Siliup SP40N02GTH with Fast Switching and Single Pulse Avalanche Energy Testing

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Product Description

Product Overview

The SP40N02GTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low Gate Charge, and low RDS(on). This MOSFET is ideal for applications such as DC-DC converters, motor control, and portable equipment. It features 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP40N02GTH
Channel Type: N-Channel
Technology: Split Gate Trench Technology
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
V(BR)DSS	V(BR)DSS				40	V
RDS(on)TYP	RDS(on)	@10V		1.9	2.4	m
RDS(on)TYP	RDS(on)	@4.5V		2.7	3.6	m
ID	ID				130	A
Absolute Maximum Ratings
Drain-Source Voltage	VDSS				40	V
Gate-Source Voltage	VGSS		-20		20	V
Continuous Drain Current (Tc=25C)	ID	(Tc=25C)			130	A
Continuous Drain Current (Tc=100C)	ID	(Tc=100C)			87	A
Pulse Drain Current Tested	IDM				520	A
Single pulsed avalanche energy	EAS				529	mJ
Power Dissipation (Tc=25C)	PD	(Tc=25C)			110	W
Thermal Resistance Junction-to-Case	RJC				1.14	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =30A	-	1.9	2.4	m
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =20A	-	2.7	3.6	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	3200	-	pF
Output Capacitance	Coss		-	1880	-	pF
Reverse Transfer Capacitance	Crss		-	65	-	pF
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=30A	-	54	-	nC
Gate-Source Charge	Qgs		-	9.5	-
Gate-Drain Charge	Qg d		-	11	-
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=20 VGS=10V , RG=1.6, ID=65A	-	9.5	-	nS
Rise Time	Tr		-	3	-
Turn-Off Delay Time	Td(off)		-	33	-
Fall Time	Tf		-	4	-
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Diode Continuous Current	IS		-	-	130	A
Reverse recover time	Trr	IS=55A, di/dt=100A/us, Tj=25	-	58	-	nS
Reverse recovery charge	Qrr		-	52	-	nC
Package Information (TO-252)
Symbol	Dimensions (mm)	Dimensions (inches)	Min.	Max.	Min.	Max.
A	2.200 - 2.400	0.087 - 0.094
A1	0.000 - 0.127	0.000 - 0.005
b	0.660 - 0.860	0.026 - 0.034
c	0.460 - 0.580	0.018 - 0.023
D	6.500 - 6.700	0.256 - 0.264
D1	5.100 - 5.460	0.201 - 0.215
D2	4.830 REF.	0.190 REF.
E	6.000 - 6.200	0.236 - 0.244
e	2.186 - 2.386	0.086 - 0.094
L	9.800 - 10.400	0.386 - 0.409
L1	2.900 REF.	0.114 REF.
L2	1.400 - 1.700	0.055 - 0.067
L3	1.600 REF.	0.063 REF.
L4	0.600 - 1.000	0.024 - 0.039
	1.100 - 1.300	0.043 - 0.051
	0 - 8	0 - 8
h	0.000 - 0.300	0.000 - 0.012
V	5.350 REF.	0.211 REF.