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China Low On Resistance 30V N-Channel MOSFET Siliup SP30N01GTQ Suitable for High Current Power Applications for sale

Low On Resistance 30V N-Channel MOSFET Siliup SP30N01GTQ Suitable for High Current Power Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP30N01GTQ is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications and DC-DC converters, featuring 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 30N01G
  • Package: TO-220-3L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
Drain-Source On-state Resistance RDS(on) @10V 1.65 m
Drain-Source On-state Resistance RDS(on) @4.5V 2 m
Continuous Drain Current ID 160 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 160 A
Continuous Drain Current (Tc=100C) ID 110 A
Pulse Drain Current IDM Tested 640 A
Single Pulse Avalanche Energy EAS 1444 mJ
Power Dissipation (Tc=25C) PD 180 W
Thermal Resistance Junction-to-Case RJC 0.69 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.9 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V , ID=20A - 1.65 2.1 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=20A - 2 2.7 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 5451 - pF
Output Capacitance Coss - 1832 - pF
Reverse Transfer Capacitance Crss - 101 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 92 - nC
Gate-Source Charge Qgs - 12 - nC
Gate-Drain Charge Qgd - 13 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=15V , VGS=10V , RG=1.6 ID=60A - 13 - nS
Rise Time tr - 6 - nS
Turn-Off Delay Time td(off) - 45 - nS
Fall Time tf - 8 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 160 A
Reverse Recovery Time trr IS=50 A,di/dt=100 A/sTJ=25 - 35 - nS
Reverse Recovery Charge Qrr - 106 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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