Compact SOT 523 package P Channel MOSFET Siliup SP2006KT5J designed for surface mount load switching

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Product Description

Product Overview

The SP2006KT5J is a 20V P-Channel MOSFET designed for surface mount applications. It features low R_DS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This device is ESD protected.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Model: SP2006KT5J
Technology: P-Channel MOSFET
Package: SOT-523
Marking Code: 39K

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-20	V
R_DS(on) MAX	R_DS(on)	@-4.5V			0.75
	R_DS(on)	@-2.5V			1.0
Continuous Drain Current	ID				-0.66	A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS				-20	V
Gate-Source Voltage	VGS				12	V
Continuous Drain Current	ID				-0.66	A
Pulsed Drain Current	IDM				-1.2	A
Power Dissipation	PD				0.15	W
Thermal Resistance Junction to Ambient	RJA				833	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55	~	+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250A	-20			V
Zero gate voltage drain current	IDSS	VDS =-16V,VGS = 0V			-1	A
Gate-body leakage current	IGSS	VGS = 10VVDS =0V			10	A
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250A	-0.35	-0.65	-1	V
Drain-source on-resistance	RDS(on)	VGS = -4.5V, ID = -0.5A		0.65	0.75
	RDS(on)	VGS = -2.5V, ID = -0.2A		0.85	1.0	V
	RDS(on)	VGS = -1.8V, ID = -0.1A			1.2	V
Dynamic Characteristics²⁾
Input Capacitance	Ciss	VDS =-16V,VGS =0V,f =1MHz		113		pF
Output Capacitance	Coss			15		pF
Reverse Transfer Capacitance	Crss			9		pF
Turn-on delay time	td(on)	VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10		9		ns
Turn-on rise time	tr			5.7		ns
Turn-off delay time	td(off)			32.6		ns
Turn-off fall time	tf			20.3		ns
Source-Drain Diode Characteristics
Diode Forward voltage	VSD	VGS =0V, IS=-0.5 A		-1.2		V