Siliup SP2002KDTW D2 20V N Channel MOSFET for Logic Level Shifting and Power Switching Applications
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Product Description
Product Overview
The SP2002KDTW-D2 is a 20V N-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, battery management for ultra-small portable electronics, and logic level shifting. This ESD-protected device offers efficient switching performance.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Device Code: 6303
- Package Type: SOT-363
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulsed Drain Current | IDM | 0.18 | A | |||
| Power Dissipation | PD | 0.2 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.3 | 0.65 | 1 | V |
| Drain-source on-resistance | RDS(on) | VGS = 4.5V, ID = 0.5A | 0.25 | 0.38 | Ω | |
| VGS =2.5V, ID = 0.5A | 0.35 | 0.45 | Ω | |||
| VGS =1.8V, ID = 0.5A | 0.4 | 0.8 | Ω | |||
| VGS =1.5V, ID = 0.5A | 0.5 | Ω | ||||
| VGS =1.2V, ID = 0.5A | 1 | Ω | ||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V, f=1MHz | 79 | 120 | pF | |
| Output Capacitance | Coss | 13 | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | 9 | 15 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 6.7 | ns | ||
| Turn-on rise time | tr | 4.8 | ns | |||
| Turn-off delay time | td(off) | 17.3 | ns | |||
| Turn-off fall time | tf | 7.4 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Body Diode Voltage | VSD | IS=0.5A, VGS = 0V | 0.7 | 1.3 | V | |
| Package Information (SOT-363) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | (TYP.) | 0.65 | ||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.40 | ||||
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