60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package
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Product Description
Product Overview
The SP60N01BGHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as chargers, battery management, and power switching. The device is available in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N01BGHTD
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 1.7 | m | |||
| ID | 200 | A | ||||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) - Silicon limit | ID | 330 | A | |||
| Continuous Drain Current (Tc=25) - Package limit | ID | 200 | A | |||
| Pulsed Drain Current | IDM | 800 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1332 | mJ | |||
| Power Dissipation (Tc=25) | PD | 213 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.58 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=48V , VGS=0V | - | 1 | A | |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=30A | - | 1.7 | 2.1 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 7397 | - | pF |
| Output Capacitance | Coss | - | 3885 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 32 | - | pF | |
| Total Gate Charge | Qg | VDS=48V , VGS=10V , ID=30A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | - | 20 | - | nC | |
| Gate-Drain Charge | Qgd | - | 18 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=48V,VGS=10V,RG=2, ID=30A | - | 32.3 | - | nS |
| Rise Time | tr | - | 52.1 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 91 | - | nS | |
| Fall Time | tf | - | 27.8 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 76 | - | nS |
| Reverse Recovery Charge | Qrr | - | 106 | - | nC | |
| Note: 1. The EAS test condition is VDD=30V,VGS=10V,L=0.5mH,RG=25 | ||||||
| Package Information: TO-263 | ||||||
| Marking: 60N01BGH (Product code) : Week code | ||||||
| Order Information: Device: SP60N01BGHTD, Package: TO-263, Unit/Tape: 800 | ||||||
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