power MOSFET Siliup SP60P05GTQ 60V P Channel designed for low RDS on and fast switching in power management circuits
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Product Description
Product Overview
The SP60P05GTQ is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on), benefiting from advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P05GTQ
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -60 | V | |||
| On-Resistance (Typ.) | RDS(on)TYP | @-10V | 5.8 | 7.3 | m | |
| On-Resistance (Typ.) | RDS(on)TYP | @-4.5V | 8.0 | 10.5 | m | |
| Continuous Drain Current | ID | -130 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | -60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -130 | A | |||
| Continuous Drain Current (Tc=100) | ID | -87 | A | |||
| Pulsed Drain Current | IDM | -520 | A | |||
| Power Dissipation (Tc=25) | PD | 153 | W | |||
| Single Pulsed Avalanche Energy | EAS | 1092 | mJ | |||
| Thermal Resistance, Junction-Case | RJC | 0.82 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V, VGS=0V, TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.0 | -2.0 | -3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-30A | 5.8 | 7.3 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-30A | 8.0 | 10.5 | m | |
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 6185 | pF | ||
| Output Capacitance | Coss | 1132 | pF | |||
| Reverse Transfer Capacitance | Crss | 81 | pF | |||
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-40A | 82 | nC | ||
| Gate-Source Charge | Qgs | 26 | nC | |||
| Gate-Drain Charge | Qgd | 18 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V, RG=2.6, ID=-40A | 15 | ns | ||
| Rise Time | Tr | 52 | ns | |||
| Turn-Off Delay Time | Td(off) | 135 | ns | |||
| Fall Time | Tf | 168 | ns | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | ||
| Reverse Recovery Time | Trr | IS=-40A, di/dt=200A/us, TJ=25 | 65 | ns | ||
| Reverse Recovery Charge | Qrr | 238 | nC | |||
| Diode Continuous Current | IS | -130 | A | |||
| Package Information (TO-220-3L) | ||||||
| Dimension | Symbol | Unit | Min. | Max. | ||
| A | A | Millimeters | 2.700 | 2.900 | ||
| B | B | Millimeters | 6.400 | 6.800 | ||
| C | C | Millimeters | 0.300 | 0.700 | ||
| D | D | Millimeters | 11 | 15 | ||
| E | E | Millimeters | 1.1 | 1.5 | ||
| F | F | Millimeters | 0.7 | 0.9 | ||
| G | G | TYP | 2.54 | |||
| W | W | Millimeters | 9.8 | 10.2 | ||
| H | H | Millimeters | 4.3 | 4.7 | ||
| H1 | H1 | Millimeters | 2.2 | 2.5 | ||
| K | K | Millimeters | 2.7 | 3.1 | ||
| L | L | Millimeters | 14.8 | 16.8 | ||
| L1 | L1 | Millimeters | 9.0 | 9.4 | ||
| N | N | Millimeters | 1.2 | 1.4 | ||
| P | P | Millimeters | 12.7 | 13.3 | ||
| P1 | P1 | Millimeters | 7.6 | 8.2 | ||
| Q | Q | Millimeters | 3.5 | 3.7 | ||
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