NPN Transistor Slkor D882 with 30 Volt Collector Emitter Breakdown Voltage and SOT 89 Package Design

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Product Description

Product Overview

The D882 TRANSISTOR (NPN) is a semiconductor component designed for electronic circuits. It offers a continuous collector current of 3 A and a power dissipation of 0.5 W. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 400, and a transition frequency of 50 MHz. This transistor is suitable for various applications requiring amplification and switching functionalities.

Product Attributes

Model: D882
Type: TRANSISTOR (NPN)
Package: SOT-89
Pinout: 1. BASE, 2. COLLECTOR, 3. EMITTER
hFE Classification Ranks: R (60-120), O (100-200), Y (160-320), GR (200-400)

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	Ic=100uA ,IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 10 mA , IB=0			30	V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100 mA ,IC=0			6	V
Collector cut-off current	ICBO	VCB=40 V , IE=0			1	uA
Collector cut-off current	ICEO	VCE=30 V , IB=0			10	uA
Emitter cut-off current	IEBO	VEB=6V , IC=0			1	uA
DC current gain	hFE(1)	VCE=2V, IC= 1A	60		400
DC current gain	hFE(2)	VCE=2V, IC= 100mA		32
Collector-emitter saturation voltage	VCE(sat)	IC=2A, IB= 0.2A			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=2A, IB= 0.2A			1.5	V
Transition frequency	fT	VCE=5 V, IC=0.1mA		50		MHz
Collector-Base Voltage	VCBO	(Ta=25 unless otherwise noted)			40	V
Collector-Emitter Voltage	VCEO	(Ta=25 unless otherwise noted)			30	V
Emitter-Base Voltage	VEBO	(Ta=25 unless otherwise noted)			6	V
Collector Current -Continuous	IC	(Ta=25 unless otherwise noted)			3	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			0.5	W
Junction Temperature	TJ	(Ta=25 unless otherwise noted)			150
Storage Temperature	Tstg	(Ta=25 unless otherwise noted)	-55		150