High Frequency Switching MOSFET Siliup SP10N90TG 900V N Channel Planar Device in TO 220F Package
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Product Description
Product Overview
The SP10N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy, making it ideal for DC-DC converters and synchronous rectification. The device is housed in a TO-220F package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP10N90TG
- Technology: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 900 | V | |||
| RDS(on) | RDS(on) | @10V | 0.98 | |||
| Continuous Drain Current | ID | 10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 900 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 10 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 6.66 | A | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single Pulse Avalanche Energy | EAS | 980 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 41 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.05 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 900 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 720V, VGS = 0V | - | - | 25 | A |
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 5A | - | 0.98 | 1.25 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2713 | - | pF |
| Output Capacitance | Coss | - | 208 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 11 | - | pF | |
| Total Gate Charge | Qg | VDS=720V , VGS=10V , ID=10A | - | 58 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | ||
| Gate-Drain Charge | Qg | - | 23 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 450V, VDS = 25V, ID = 4A, RG = 2.5 | - | 30 | - | nS |
| Rise Time | tr | - | 41 | - | ||
| Turn-Off Delay Time | td(off) | - | 80 | - | ||
| Fall Time | tf | - | 51 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=9A, di/dt=100A/us, TJ=25 | - | 850 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 8050 | - | nC | |
| Package Information (TO-220F) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | REF. | TYP. | |
| A | 4.300 | 4.700 | ||||
| A1 | 1.300 | |||||
| A2 | 2.800 | 3.200 | ||||
| A3 | 2.500 | 2.900 | ||||
| b | 0.500 | 0.750 | ||||
| b1 | 1.100 | 1.350 | ||||
| b2 | 1.500 | 1.750 | ||||
| c | 0.500 | 0.750 | ||||
| D | 9.960 | 10.360 | ||||
| E | 14.800 | 15.200 | ||||
| e | 2.540 | |||||
| F | 2.700 | |||||
| 3.500 | ||||||
| h | 0.000 | 0.300 | ||||
| h1 | 0.800 | |||||
| h2 | 0.500 | |||||
| L | 28.000 | 28.400 | ||||
| L1 | 1.700 | 1.900 | ||||
| L2 | 0.900 | 1.100 | ||||
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