High current 60 Amp N Channel MOSFET Siliup SP20N05TH optimized for high frequency power conversion

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Product Description

Product Overview

The SP20N05TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications such as DC-DC converters. This device is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP20N05TH
Device Code: 20N05
Channel Type: N-Channel
Package Type: TO-252

Technical Specifications

Product Summary
V(BR)DSS	RDS(on)TYP	ID	Applications
20V	4.8m@4.5V 6.2m@2.5V	60A	DC-DC Converter High-frequency switching Synchronous rectification

Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Parameter	Symbol	Rating	Units
Drain-Source Voltage	VDS	20	V
Gate-Source Voltage	VGS	12	V
Continuous Drain Current (TC=25)	ID	60	A
Continuous Drain Current (TC=100)	ID	40	A
Pulsed Drain Current	IDM	240	A
Single Pulse Avalanche Energy	EAS	64	mJ
Power Dissipation (TC=25)	PD	37	W
Thermal Resistance Junction-to-Case	RJC	3.4	/W
Storage Temperature Range	TSTG	-55 to 150
Operating Junction Temperature Range	TJ	-55 to 150

Electrical Characteristics (Ta=25, unless otherwise noted)
Parameter	Symbol	Conditions	Typ.	Unit
Static Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	20	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V , TJ=25	-	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	0.75	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=20A	4.8	m
		VGS=2.5V , ID=15A	6.2	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	2000	pF
Output Capacitance	Coss		278	pF
Reverse Transfer Capacitance	Crss		198	pF
Total Gate Charge	Qg	VDS=10V,VGS=10V,ID=20A	27	nC
Gate-Source Charge	Qgs		6.5
Gate-Drain Charge	Qgd		6.4
Switching Characteristics
Turn-On Delay Time	Td(on)	VGS=4.5V,VDD=10V,ID=20A,RG=3	11	nS
Rise Time	Tr		33	nS
Turn-Off Delay Time	Td(off)		47	nS
Fall Time	Tf		95	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	V
Maximum Body-Diode Continuous Current	IS		60	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	11	nS
Reverse Recovery Charge	Qrr		3	nC

TO-252 Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.