Power MOSFET 60V N Channel Siliup SP60N08GNK Featuring Split Gate Trench Technology and Low On Resistance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N08GNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60N08GNK
- Channel Type: N-Channel
- Technology: Split Gate Trench Technology
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Drain-Source On-state Resistance | RDS(on) | 10V | 7.5 | 9.5 | m | |
| Drain-Source On-state Resistance | RDS(on) | 4.5V | 10 | 13.5 | m | |
| Continuous Drain Current | ID | Tc=25C | 55 | A | ||
| Continuous Drain Current | ID | Tc=100C | 35 | A | ||
| Pulse Drain Current | IDM | Tested | 220 | A | ||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | |||
| Power Dissipation | PD | Tc=25C | 60 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.08 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | nC | |
| Gate-Drain Charge | Qg d | - | 6.2 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 33.8 | - | nS | |
| Fall Time | tf | - | 26.4 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 55 | A | |
| Reverse Recovery Time | Trr | IS=30 A,di/dt=100 A/sTJ=25 | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC |
| PDFN5X6-8L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |
| A | 0.900 - 1.000 | 0.035 - 0.039 | |
| A3 | 0.254REF. | 0.010REF. | |
| D | 4.944 - 5.096 | 0.195 - 0.201 | |
| E | 5.974 - 6.126 | 0.235 - 0.241 | |
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | |
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | |
| k | 1.190 - 1.390 | 0.047 - 0.055 | |
| b | 0.350 - 0.450 | 0.014 - 0.018 | |
| e | 1.270TYP. | 0.050TYP. | |
| L | 0.559 - 0.711 | 0.022 - 0.028 | |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | |
| H | 0.574 - 0.726 | 0.023 - 0.029 | |
| 10 - 12 | 10 - 12 | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina