High collector current PNP transistor Slkor SS8550W designed for general purpose electronic circuits

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Product Description

Product Overview

The SS8550W is a PNP transistor designed for general-purpose applications. It offers high collector current capability and features complementary characteristics to the SS8050W. This transistor is suitable for various electronic circuits requiring amplification and switching functions.

Product Attributes

Brand: SLKOR
Model: SS8550W
Transistor Type: PNP
Package: SOT-323
Marking: Y2
Rank Range: 200350

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Absolute Maximum Ratings (Ta = 25)
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-25	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current	IC			-1.5	A
Collector Power Dissipation	PC			200	mW
Thermal Resistance From Junction To Ambient	RJA			625	/W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-40V, IE=0		-100	nA
Collector cut-off current	ICEO	VCE=-20V, IB=0		-100	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-100	nA
DC current gain	hFE(1)	VCE=-1V, IC=-100mA	120	400
DC current gain	hFE(2)	VCE=-1V, IC=-800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB=-80mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB=-80mA		-1.2	V
Base-emitter voltage	VBE	VCE=-1V, IC=-10mA		-1	V
Transition frequency	fT	VCE=-10V,IC=-50mA, f=30MHz		100	MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz		20	pF