Complementary MOSFET transistor Siliup SP6038CP8 60V with high current handling and low on resistance

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Product Description

Product Overview

The SP6038CP8 is a 60V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP6038CP8
Package Type: SOP-8L
Certifications: Lead-free product acquired
Device Code: 6038

Technical Specifications

Parameter	Symbol	N-Channel		P-Channel		Units
Parameter	Symbol	Conditions	Typ.	Conditions	Typ.	Units
Product Summary
Drain-Source Voltage	V(BR)DSS	60V		-60V		V
On-Resistance	RDS(on)	@10V, 4.5A	35m	@-10V, -3.5A	80m	m
On-Resistance	RDS(on)	@4.5V, 4A	45m	@-4.5V, -2.5A	95m	m
Continuous Drain Current	ID	-	5A	-	-3.5A	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS	N-Channel	60	P-Channel	-60	V
Gate-Source Voltage	VGS	N-Channel	20	P-Channel	20	V
Continuous Drain Current	ID	N-Channel	5	P-Channel	-3.5	A
Pulsed Drain Current	IDM	N-Channel	20	P-Channel	-14	A
Single Pulse Avalanche Energy	EAS	N-Channel	18	P-Channel	30	mJ
Power Dissipation	PD	2				W
Thermal Resistance Junction-to-Ambient	RJA	62.5				/W
Storage Temperature Range	TSTG	-55 to 150
Operating Junction Temperature Range	TJ	-55 to 150
N-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V, VGS=0V, TJ=25	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID=250uA	1.0	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V, ID=4.5A	35	50	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V, ID=4A	45	65	m
Input Capacitance	Ciss	VDS=30V, VGS=0V, f=1MHz	-	1165	pF
Output Capacitance	Coss	-	53	-	pF
Reverse Transfer Capacitance	Crss	-	46	-	pF
Total Gate Charge	Qg	VDS=30V, VGS=10V, ID=5A	-	22	nC
Gate-Source Charge	Qgs	-	2.5	-	nC
Gate-Drain Charge	Qg	-	3.4	-	nC
Turn-On Delay Time	Td(on)	VDD=30V, VGS=10V, RG=3, ID=10A	-	4.4	nS
Rise Time	Tr	-	3.4	-	nS
Turn-Off Delay Time	Td(off)	-	16	-	nS
Fall Time	Tf	-	2	-	nS
Diode Forward Voltage	VSD	VGS=0V, IS=1A, TJ=25	-	1.2	V
Maximum Body-Diode Continuous Current	IS	-	5	-	A
Reverse Recovery Time	Trr	IS=5A, di/dt=100A/us, TJ=25	-	23	nS
Reverse Recovery Charge	Qrr	-	9	-	nC
P-Channel Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-	-60	V
Drain-Source Leakage Current	IDSS	VDS=-48V, VGS=0V, TJ=25	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =-250uA	-1.0	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-3.5A	-	80	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-2.5A	-	95	m
Input Capacitance	Ciss	VDS=-30V, VGS=0V, f=1MHz	-	960	pF
Output Capacitance	Coss	-	87	-	pF
Reverse Transfer Capacitance	Crss	-	38	-	pF
Total Gate Charge	Qg	VDS=-30V, VGS=-10V, ID=-4A	-	15.7	nC
Gate-Source Charge	Qgs	-	3	-	nC
Gate-Drain Charge	Qg	-	3.5	-	nC
Turn-On Delay Time	Td(on)	VDD=-30V, VGS=-10V, RG=3, ID=-5A	-	9	nS
Rise Time	Tr	-	11	-	nS
Turn-Off Delay Time	Td(off)	-	25	-	nS
Fall Time	Tf	-	12	-	nS
Diode Forward Voltage	VSD	VGS=0V, IS=-1A, TJ=25	-	-1.2	V
Maximum Body-Diode Continuous Current	IS	-	-3.5	-	A
Reverse Recovery Time	Trr	IS=-3A, di/dt=-100A/us, Tj=25	-	26.5	nS
Reverse Recovery Charge	Qrr	-	31	-	nC
SOP-8L Package Information
Symbol	Dimensions (mm)	Min.	Max.	REF.
A		1.35	1.75
A1		0.10	0.25
A2		1.35	1.55
b		0.33	0.51
c		0.17	0.25
D		4.80	5.00
e		1.27
E		5.80	6.20
E1		3.80	4.00
L		0.40	1.27
		0	8