Power Switching P Channel MOSFET Siliup SP9435P8 Featuring Low RDSon and Fast Switching Performance

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Product Description

Product Overview

The SP9435P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low R_DS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies (UPS). The device is available in a SOP-8L package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP9435P8
Technology: P-Channel MOSFET
Package: SOP-8L
Marking: 9435 (Device Code)

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
V(BR)DSS					-30	V
RDS(on)TYP		@-10V		45	60	m
RDS(on)TYP		@-4.5V		65	100	m
ID					-5	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				-5	A
Pulsed Drain Current	IDM				-20	A
Power Dissipation	PD				1.2	W
Thermal Resistance Junction-to-Ambient	RJA				104	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-30	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-24V, VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-4A	-	45	60	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-2A	-	65	100	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V, VGS=0V, f=1MHz	-	463	-	pF
Output Capacitance	Coss		-	82	-	pF
Reverse Transfer Capacitance	Crss		-	68	-	pF
Total Gate Charge	Qg	VDS=-15V, VGS=-10V, ID=-5.1A	-	5.22	-	nC
Gate-Source Charge	Qgs		-	1.25	-	nC
Gate-Drain Charge	Qg d		-	2.3	-	nC
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-15V, VGS=-10V, RG=6, ID=-1A	-	18.4	-	nS
Rise Time	Tr		-	11.4	-	nS
Turn-Off Delay Time	Td(off)		-	39.4	-	nS
Fall Time	Tf		-	5.2	-	nS
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V, IS=-1A	-	-	-1.2	V
Package Information (SOP-8L)
Symbol	Dimensions (mm)	Min.	Max.
A		1.35	1.75
A1		0.10	0.25
A2		1.35	1.55
b		0.33	0.51
c		0.17	0.25
D		4.80	5.00
e	(REF.)	1.27
E		5.80	6.20
E1		3.80	4.00
L		0.40	1.27
		0	8