Surface Mount 30V P Channel MOSFET Siliup SP3407T1 Featuring Low RDSon and Continuous Drain Current

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Product Description

Product Overview

The SP3407T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features a low RDS(on) of 45m at -10V and 65m at -4.5V, with a continuous drain current of -4.1A.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-23-3L
Device Code: 3407

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-30	V
RDS(on)		@-10V		45		m
RDS(on)		@-4.5V		65		m
ID					-4.1	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				-30	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current	ID				-4.1	A
Pulse Drain Current	IDM	Tested			-16.4	A
Power Dissipation	PD				1.4	W
Thermal Resistance Junction-to-Ambient	RJA				90	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1	-1.6	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-4.1A		45	60	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-3A		65	90	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		501		pF
Output Capacitance	Coss			72		pF
Reverse Transfer Capacitance	Crss			57		pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-5A		9		nC
Gate-Source Charge	Qgs			1.5
Gate-Drain Charge	Qg			2.3
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-15V VGS=-10V , RG=3 , ID=-1A		8.6		nS
Turn-On Rise Time	tr			5.0
Turn-Off Delay Time	td(off)			28.2
Turn-Off Fall Time	tf			13.5
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (Dimensions in millimeters)
Symbol	Min.	Max.	Typ.
A	1.050	1.250
A1	0.000	0.100
A2	1.050	1.150
b	0.300	0.500
c	0.100	0.200
D	2.820	3.020
E	1.500	1.700
E1	2.650	2.950
e			0.950
e1	1.800	2.000
L	0.300	0.600
	0	8