Siliup SP2301BT2 P Channel MOSFET 20V 2A Continuous Drain Current for DC DC Converter and Battery Switch

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2301BT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capability. It is suitable for surface mount applications and is commonly used in battery switches and DC/DC converters. The device offers a continuous drain current of -2A and features a low static drain-source on-resistance.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2301BT2
Package: SOT-23
Device Code: 2301B

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-20			V
On-Resistance	RDS(on)	@ -4.5V		95	120	m
On-Resistance	RDS(on)	@ -2.5V		120	150	m
Continuous Drain Current	ID				-2	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-20			V
Gate-Source Voltage	VGSS			10		V
Continuous Drain Current	ID				-2	A
Pulse Drain Current	IDM	Tested			-8	A
Power Dissipation	PD				400	mW
Thermal Resistance Junction-to-Ambient	RJA				312.5	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20			V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.4	-0.75	-0.9	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V, ID=-1.5A		95	120	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V, ID=-1.0A		120	150	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-10V , VGS=0V , f=1MHz		485		pF
Output Capacitance	Coss			58		pF
Reverse Transfer Capacitance	Crss			49		pF
Total Gate Charge	Qg	VDS=-10V , VGS=-2.5V , ID=-2A		6.5		nC
Gate-Source Charge	Qgs			0.28
Gate-Drain Charge	Qg			0.6
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=6 , ID=-2A		7		nS
Turn-On Rise Time	tr			6
Turn-Off Delay Time	td(off)			42
Turn-Off Fall Time	tf			6.5
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-23)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80 REF.	2.00
L		0.55 REF.
L1		0.30	0.50
		0	8