High power handling Siliup 2SK3019A N Channel MOSFET with 60V drain source voltage and ESD protection up to 2KV
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 2SK3019A is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device offers ESD protection up to 2KV. Its key applications include battery switches and DC/DC converters, providing reliable performance in compact electronic systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Siliup
- Material: Silicon
- Package Type: SOT-523
- Circuit Diagram: KN
- Origin: China (implied by company name and domain)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 2 | |||
| @4.5V | 2.5 | |||||
| Continuous Drain Current | ID | 100 | mA | |||
| Features | ||||||
| High power and current handling capability | ||||||
| Surface mount package | ||||||
| ESD protected 2KV | ||||||
| Application | ||||||
| Battery Switch | ||||||
| DC/DC Converter | ||||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| 2SK3019A | SOT-523 | 3000 | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 100 | mA | |||
| Pulse Drain Current | IDM | Tested | 400 | mA | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 10 | uA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.45 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 2 | 5 | |
| VGS =4.5V, ID =100mA | - | 2.5 | 8 | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | pF | |
| Output Capacitance | Coss | - | 6 | pF | ||
| Reverse Transfer Capacitance | Crss | - | 2.5 | pF | ||
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | nC | |
| Gate-Source Charge | Qgs | - | 0.29 | |||
| Gate-Drain Charge | Qg d | - | 0.2 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | nS | |
| Turn-On Rise Time | tr | - | 18 | |||
| Turn-Off Delay Time | td(off) | - | 8 | |||
| Turn-Off Fall Time | tf | - | 14 | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 TYP | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 REF | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
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