16V P Channel MOSFET Siliup SP1613T1 with Surface Mount Package and High Current Handling Capability

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Product Description

Product Overview

The SP1613T1 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance of 16m at -4.5V and 21m at -2.5V, with a continuous drain current rating of -8A.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Model: SP1613T1
Package Type: SOT-23-3L
Device Code: 1613

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Drain-Source Voltage	VDSS	-	-16	-	-	V
Gate-Source Voltage	VGSS	-	-	-	12	V
Continuous Drain Current	ID	-	-	-	-8	A
Pulse Drain Current	IDM	Tested	-	-	-32	A
Power Dissipation	PD	Ta=25	-	-	2	W
Thermal Resistance Junction-to-Ambient	RJA	-	-	62.5	-	C/W
Storage Temperature Range	TSTG	-	-55	-	150	C
Operating Junction Temperature Range	TJ	-	-55	-	150	C
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-16	-	-	V
Drain-Source Leakage Current	IDSS	VDS=-13V , VGS=0V	-	-	-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.4	-0.7	-1.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= -4.5V, ID=-6A	-	16	20	m
Static Drain-Source On-Resistance	RDS(ON)	VGS= -2.5V, ID=-5A	-	21	28	m
Input Capacitance	Ciss	VDS=-10V , VGS=0V , f=1MHz	-	2050	-	pF
Output Capacitance	Coss	-	-	411	-	pF
Reverse Transfer Capacitance	Crss	-	-	362	-	pF
Total Gate Charge	Qg	VDS=-16V , VGS=-10V , ID=-9.1A	-	30	-	nC
Gate-Source Charge	Qgs	-	-	5.3	-	-
Gate-Drain Charge	Qg d	-	-	7.6	-	-
Turn-On Delay Time	td(on)	VDD=-16V VGS=-10V , RG=2.5, ID=-6A	-	14	-	nS
Turn-On Rise Time	tr	-	-	20	-	-
Turn-Off Delay Time	td(off)	-	-	95	-	-
Turn-Off Fall Time	tf	-	-	65	-	-
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-	-	-1.2	V