High power 60V N Channel MOSFET Siliup SP60N1K1T2 surface mount device for battery switch applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
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Product Description
Product Overview
The SP60N1K1T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for high power and current handling, this surface mount device features ESD protection up to 2KV. It is ideally suited for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N1K1T2
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 60 | V |
| RDS(on)TYP | - | @10V | - | 1.1 | - | |
| RDS(on)TYP | - | @4.5V | - | 1.4 | - | |
| ID | - | - | - | - | 300 | mA |
| Features | ||||||
| - | - | - | High power and current handing capability | |||
| - | - | - | Surface mount package | |||
| - | - | - | ESD protected 2KV | |||
| Applications | ||||||
| - | - | - | Battery Switch | |||
| - | - | - | DC/DC Converter | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 60 | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Continuous Drain Current | ID | - | - | - | 300 | mA |
| Pulse Drain Current | IDM | Tested | - | - | 1200 | mA |
| Power Dissipation | PD | - | - | - | 225 | mW |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 555 | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 1 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =500mA | - | 1.1 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.4 | 4 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 50 | - | pF |
| Output Capacitance | Coss | - | - | 25 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 5 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=1A | - | 1.4 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.5 | - | - |
| Gate-Drain Charge | Qg d | - | - | 0.2 | - | - |
| Turn-On Delay Time | td(on) | VDD=25V VGS=10V , RG=25 , ID=1A | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | - | 18 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 10 | - | - |
| Turn-Off Fall Time | tf | - | - | 24 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | - | - | - |
| A | - | 0.90 | 1.15 | - | - | - |
| A1 | - | 0.00 | 0.10 | - | - | - |
| A2 | - | 0.90 | 1.05 | - | - | - |
| b | - | 0.30 | 0.50 | - | - | - |
| c | - | 0.08 | 0.15 | - | - | - |
| D | - | 2.80 | 3.00 | - | - | - |
| E | - | 1.20 | 1.40 | - | - | - |
| E1 | - | 2.25 | 2.55 | - | - | - |
| e | REF. | 0.95 | - | - | - | - |
| e1 | - | 1.80 | 2.00 | - | - | - |
| L | REF. | 0.55 | - | - | - | - |
| L1 | - | 0.30 | 0.50 | - | - | - |
| - | 0 | 8 | - | - | - | |
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