power switching solution with low Rdson and fast switching speeds Siliup SP30P03P8 30V P Channel MOSFET device
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Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP30P03P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low Rdson. This device is suitable for hard-switched and high-frequency circuits, including uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30P03P8
- Package: SOP-8L
- Device Code: 30P03
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on)TYP | @-4.5V | 3.5 | m | ||
| RDS(on)TYP | RDS(on)TYP | @-2.5V | 5 | m | ||
| Continuous Drain Current | ID | -25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -30 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | -25 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -100 | A | ||
| Single pulsed avalanche energy | EAS | (Ta=25) | 225 | mJ | ||
| Power Dissipation | PD | (Ta=25) | 3.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25) | 35.7 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | - | 3.5 | 4.4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | - | 5 | 6.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 5700 | - | pF |
| Output Capacitance | Coss | VDS=-15V , VGS=0V , f=1MHz | - | 859 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V , VGS=0V , f=1MHz | - | 650 | - | pF |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-20A | - | 120 | - | nC |
| Gate-Source Charge | Qgs | VDS=-15V , VGS=-10V , ID=-20A | - | 23 | - | nC |
| Gate-Drain Charge | Qg d | VDS=-15V , VGS=-10V , ID=-20A | - | 17 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3,ID=-20A | - | 27 | - | nS |
| Rise Time | Tr | VDD=-15V,VGS=-10V,RG=3,ID=-20A | - | 83 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=-15V,VGS=-10V,RG=3,ID=-20A | - | 76 | - | nS |
| Fall Time | Tf | VDD=-15V,VGS=-10V,RG=3,ID=-20A | - | 65 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -25 | A | |
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, Tj=25 | - | 48 | - | nS |
| Reverse Recovery Charge | Qrr | IS=-20A, di/dt=100A/us, Tj=25 | - | 32 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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