Surface Mount Dual NPN Small Signal Transistor Slkor MMDT3904 Suitable for Amplification Applications

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Product Description

Product Overview

The MMDT3904 is a dual NPN small signal surface mount transistor designed for low power amplification and switching applications. It features an epitaxial planar die construction and is available in an ultra-small SOT-363 surface mount package. This transistor is ideal for general switching and amplification tasks.

Product Attributes

Type: Dual NPN Small Signal Surface Mount Transistor
Package: SOT-363
Availability: Also available in lead-free version

Technical Specifications

Symbol	Parameter	Conditions	Min.	Max.	Unit
MAXIMUM RATING @ Ta=25
VCBO	Collector-base voltage			60	V
VCEO	Collector-emitter voltage			40	V
VEBO	Emitter-base voltage			6	V
IC	Collector current -continuous			0.2	A
Ptot	Total power dissipation			0.2	W
RJA	Thermal Resistance, Junction to Ambient			625	/W
Tstg	Storage temperature		-55	+150	C
Tj	Junction temperature		-55	+150	C
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
V(BR)CBO	Collector-base breakdown voltage	IC=10A,IE=0	60		V
V(BR)CEO	Collector-emitter breakdown voltage	IC=1mA,IB=0	40		V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A,IC=0	5		V
ICEX	Collector cut-off current	VCE=30V,VEB(OFF)=3.0V	-	50	nA
IBL	Base cut-off current	VCE=30V,VEB(OFF)=3.0V	-	50	nA
hFE	DC current gain	VCE =1V,IC= 0.1mA	40	300	-
		VCE =1V,IC =1mA	70	-	-
		VCE =1V,IC =10mA	100	-	-
		VCE =1V,IC =50mA	60	-	-
		VCE =1V,IC =100mA	30	-	-
VCE(sat)	Collector-emitter saturation voltage	IC =10mA,IB =1mA	-	200	mV
VCE(sat)	Collector-emitter saturation voltage	IC =50mA,IB =5mA	-	300	mV
VBE(sat)	Base-emitter saturation voltage	IC =10mA,IB =1mA	650	850	mV
VBE(sat)	Base-emitter saturation voltage	IC =50mA, IB =5mA	-	950	mV
Cobo	Output capacitance	IE =0, VCB =5V, f =1MHz	-	4	pF
Cibo	Input capacitance	IC=0, VEB =0.5V, f =1MHz	-	8	pF
fT	Transition frequency	IC=10mA,VCE=20V,f=100MHz	300	-	MHz
NF	Noise figure	IC=0.1mA,VCE =5V,RS=1k, f = 1kHz	-	5	dB
td	Delay time	VCC=3V,VBE(off)=-0.5V IC=10mA IB1=1mA	-	35	ns
tr	Rise time	VCC=3V,VBE(off)=-0.5V IC=10mA IB1=1mA	-	35	ns
ts	Storage time	VCC=3V,IC=10mA IB1=IB2=1mA	-	200	ns
tf	Fall time	VCC=3V,IC=10mA IB1=IB2=1mA	-	50	ns
PACKAGE INFORMATION
Package Type	Dimensions (mm)		Min	Max	Typical
SOT-363	A		2.00	2.20
	B		1.15	1.35
	C		0.95
	D				0.25
	E		0.25	0.40
	G		0.60	0.70
	H		0.02	0.10
	J				0.10
	K		2.2	2.4
			0.50	0.40	1.90
			0.65	0.65
Device	Package	Shipping
MMDT3904	SOT-363	3000/Tape&Reel