High frequency power switching mosfet Siliup SP60N13P8 with low gate charge and low RDS on resistance
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP60N13P8 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N13P8
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) TYP | @10V | 13 | 18 | m | ||
| RDS(on) TYP | @4.5V | 18 | 26 | m | ||
| ID | 9 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25, unless otherwise noted) | 9 | A | ||
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 36 | A | ||
| Single pulsed avalanche energy1 | EAS | (Ta=25, unless otherwise noted) | 30 | mJ | ||
| Power Dissipation | PD | (Ta=25, unless otherwise noted) | 3.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25, unless otherwise noted) | 35.7 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=10A | - | 13 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 18 | 26 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | VDS=30V , VGS=0V , f=1MHz | - | 130 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V , VGS=0V , f=1MHz | - | 116 | - | pF |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=5A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V , VGS=10V , ID=5A | - | 5.6 | - | nC |
| Gate-Drain Charge | Qgd | VDS=30V , VGS=10V , ID=5A | - | 9.5 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V , RG=3, ID=5A | - | 7.8 | - | nS |
| Rise Time | tr | VDD=30V, VGS=10V , RG=3, ID=5A | - | 48 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V, VGS=10V , RG=3, ID=5A | - | 28 | - | nS |
| Fall Time | tf | VDD=30V, VGS=10V , RG=3, ID=5A | - | 30 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 9 | A | |
| Reverse Recovery Time | trr | IS=5A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | IS=5A, di/dt=100A/us, TJ=25 | - | 84 | - | nC |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Dimensions (mm) | Min. | Max. | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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