20V N Channel MOSFET Siliup SP2620F with 1.2A Drain Current and Low Static Drain Source On Resistance

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Product Description

Product Overview

The SP2620F is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. The device offers robust performance with key electrical characteristics optimized for efficient operation.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP2620F
Channel Type: N-Channel
Package: SOT-523
Device Code: 262

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				20	V
Static Drain-Source On-Resistance	RDS(on)	@4.5V		75	90	m
Continuous Drain Current	ID				1.2	A
Static Drain-Source On-Resistance	RDS(on)	@2.5V		90	110	m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				20	V
Gate-Source Voltage	VGSS			12		V
Continuous Drain Current	ID				1.2	A
Pulse Drain Current	IDM	Tested			4.8	A
Power Dissipation	PD				150	mW
Thermal Resistance Junction-to-Ambient	RJA				833	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.4	0.65	1	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V, ID =1A	-	75	90	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=2.5V, ID =0.5A	-	90	110	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	-	226	-	pF
Output Capacitance	Coss		-	35	-
Reverse Transfer Capacitance	Crss		-	21	-
Total Gate Charge	Qg	VDS=10V , VGS=4.5V , ID=1.2A	-	4.0	-	nC
Gate-Source Charge	Qgs		-	0.85	-
Gate-Drain Charge	Qg d		-	0.67	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=10V VGS=4.5V , RG=6 , ID=1.2A	-	7	-	nS
Turn-On Rise Time	tr		-	55	-
Turn-Off Delay Time	td(off)		-	14	-
Turn-Off Fall Time	tf		-	43	-
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-523)
Symbol	Dimensions In Millimeters	Min	Max
A		0.700	0.900
A1		0.000	0.100
A2		0.700	0.800
b1		0.150	0.250
b2		0.250	0.350
C		0.100	0.200
D		1.500	1.700
E		0.700	0.900
E1		1.450	1.750
e		0.500 TYP
e1		0.900	1.100
L		0.400 REF
L1		0.260	0.460
		0	8