General Purpose Switching Transistor Slkor BCP68-25 NPN Silicon with 1 Amp Collector Current Capacity

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Product Description

Product Overview

The BCP68 is an NPN Silicon Transistor designed for general purpose switching and amplification applications, particularly under high current conditions. It offers high current capabilities up to 1 A and operates at low voltages up to 20 V. Key features include a maximum collector current of 1 A and a peak collector current of 2 A.

Product Attributes

Brand: slkormicro (implied by website reference)
Model: BCP68
Package Type: SOT-223

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified)
Collector-Base Voltage (Open Emitter)	VCBO				32	V
Collector-Emitter Voltage (Open Base)	VCEO				20	V
Emitter-Base Voltage (Open Collector)	VEBO				5	V
DC Collector Current	IC				1	A
Peak Collector Current	ICM				2	A
Peak Base Current	IBM				200	mA
Total Power Dissipation (Ta 25)	PD				1.35	W
Junction Temperature	TJ				150
Operating Temperature	TOPR		-45		+150
Storage Temperature	TSTG		-65		+150
THERMAL DATA
Thermal Resistance From Junction To Ambient	JA				91	/W
ELECTRICAL CHARACTERISTICS (TJ = 25, unless otherwise specified.)
Collector-Emitter Saturation Voltage	VCE(SAT)	IC = 1A, IB =100mA			500	mV
		IC = 5mA, VCE = 10V		620		mV
Base-Emitter Voltage	VBE	IC = 1A, VCE = 1V		1		V
Collector Cut-off Current	ICBO	IE = 0, VCB = 25V			100	nA
		IE = 0, VCB = 25V, TJ = 150			10	A
Emitter Cut-off Current	IEBO	IC = 0, VEB = 5V			100	nA
DC Current Gain	hFE	IC = 5mA, VCE = 10V		50
		IC = 500mA, VCE = 1V		85	300
		IC = 1A, VCE = 1V		60
Collector Capacitance	CC	IE = ie = 0, VCB = 5V, f = 1MHz			48	pF
Transition Frequency	fT	IC = -10mA, VCE = -5V, f = 100MHz			40	MHz
DC Current Gain Ratio of the Complementary Pairs	hFE1 / hFE2	\|IC\| = 0.5A, \|VCE\| = 1V			1.6
hFE CLASSIFICATION
RANK		RANGE
16		100~250
25		200~300